There are no models available for this part yet.
Overview of IRF6618TRPBF by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 7 listings )
- Number of FFF Equivalents: ( 5 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF6618TRPBF by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
91Y4737
|
Newark | Mosfet, N-Ch, 30V, 170A, Directfet Mt-7, Transistor Polarity:N Channel, Continuous Drain Current Id:170A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0017Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.64V, Powerrohs Compliant: Yes |Infineon IRF6618TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$1.2900 / $2.2900 | Buy Now | |
DISTI #
IRF6618TRPBFCT-ND
|
DigiKey | MOSFET N-CH 30V 30A DIRECTFET Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Tape & Reel (TR) |
2970 In Stock |
|
$1.0785 / $3.3700 | Buy Now | |
DISTI #
IRF6618TRPBF
|
Avnet Americas | Trans MOSFET N-CH 30V 30A 7-Pin Direct-FET MT T/R - Tape and Reel (Alt: IRF6618TRPBF) RoHS: Compliant Min Qty: 290 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 23620 Partner Stock |
|
$1.0700 / $1.2600 | Buy Now | |
DISTI #
43710051
|
Verical | Trans MOSFET N-CH Si 30V 30A 7-Pin Direct-FET MT T/R RoHS: Compliant Min Qty: 47 Package Multiple: 1 Date Code: 2032 | Americas - 5116 |
|
$0.5850 / $0.6725 | Buy Now | |
Rochester Electronics | IRF6618 - DirectFet Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 46 |
|
$1.0700 / $1.2600 | Buy Now | ||
DISTI #
IRF6618TRPBF
|
TME | Transistor: N-MOSFET, unipolar, 30V, 29A, 89W, DirectFET Min Qty: 4800 | 0 |
|
$2.1000 | RFQ | |
DISTI #
C1S322000481745
|
Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 5116 |
|
$0.4680 / $0.5780 | Buy Now |
CAD Models for IRF6618TRPBF by Infineon Technologies AG
Part Data Attributes for IRF6618TRPBF by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
4 Weeks
|
Samacsys Manufacturer
|
Infineon
|
Avalanche Energy Rating (Eas)
|
210 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
30 V
|
Drain Current-Max (ID)
|
30 A
|
Drain-source On Resistance-Max
|
0.0022 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-XBCC-N3
|
JESD-609 Code
|
e1
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
UNSPECIFIED
|
Package Shape
|
RECTANGULAR
|
Package Style
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
89 W
|
Pulsed Drain Current-Max (IDM)
|
240 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
Terminal Form
|
NO LEAD
|
Terminal Position
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRF6618TRPBF
This table gives cross-reference parts and alternative options found for IRF6618TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6618TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF6618 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | Infineon Technologies AG | IRF6618TRPBF vs IRF6618 |
IRF6618TR1 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6618TRPBF vs IRF6618TR1 |
IRF6618PBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3 | International Rectifier | IRF6618TRPBF vs IRF6618PBF |
IRF6618 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6618TRPBF vs IRF6618 |
IRF6618TR1PBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6618TRPBF vs IRF6618TR1PBF |
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