Part Details for IRF6618TRPBF by Infineon Technologies AG
Overview of IRF6618TRPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF6618TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF6618TRPBFCT-ND
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DigiKey | MOSFET N-CH 30V 30A DIRECTFET Min Qty: 1 Lead time: 20 Weeks Container: Tape & Reel (TR), Cut Tape (CT) |
2970 In Stock |
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$1.0785 / $3.3800 | Buy Now |
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DISTI #
43710051
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Verical | Trans MOSFET N-CH Si 30V 30A 7-Pin Direct-FET MT T/R RoHS: Compliant Min Qty: 33 Package Multiple: 1 Date Code: 2032 | Americas - 3823 |
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$0.6138 / $0.9638 | Buy Now |
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Rochester Electronics | IRF6618 - DirectFet Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 23620 |
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$1.0200 / $1.2000 | Buy Now |
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DISTI #
IRF6618TRPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 29A, 89W, DirectFET Min Qty: 4800 | 0 |
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$2.0300 | RFQ |
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DISTI #
C1S322000481745
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 5116 |
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$0.5740 / $0.9800 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH Si 30V 30A 7-Pin Direct-FET MT T/R / MOSFET N-CH 30V 30A DIRECTFET | 7610 |
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$0.6894 / $1.0341 | Buy Now |
Part Details for IRF6618TRPBF
IRF6618TRPBF CAD Models
IRF6618TRPBF Part Data Attributes
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IRF6618TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF6618TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6618TRPBF
This table gives cross-reference parts and alternative options found for IRF6618TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6618TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF6618PBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3 | International Rectifier | IRF6618TRPBF vs IRF6618PBF |
| IRF6618 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6618TRPBF vs IRF6618 |
| IRF6618 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | Infineon Technologies AG | IRF6618TRPBF vs IRF6618 |
| IRF6618PBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3 | Infineon Technologies AG | IRF6618TRPBF vs IRF6618PBF |
| IRF6618TR1PBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6618TRPBF vs IRF6618TR1PBF |