IRF6618TRPBF
Description: Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3

Overview of IRF6618TRPBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF6618TRPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 91Y4737
Newark Mosfet, N-Ch, 30V, 170A, Directfet Mt-7, Transistor Polarity:N Channel, Continuous Drain Current Id:170A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0017Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.64V, Powerrohs Compliant: Yes |Infineon IRF6618TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $2.2900
  • 10 $2.0800
  • 25 $1.9600
  • 50 $1.8500
  • 100 $1.7300
  • 250 $1.6000
  • 500 $1.4700
  • 1,000 $1.2900
$1.2900 / $2.2900 Buy Now
DISTI # IRF6618TRPBFCT-ND
DigiKey MOSFET N-CH 30V 30A DIRECTFET Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Tape & Reel (TR) 2970
In Stock
  • 1 $3.3700
  • 10 $2.1970
  • 100 $1.5290
  • 500 $1.2430
  • 1,000 $1.1510
  • 2,000 $1.0785
$1.0785 / $3.3700 Buy Now
DISTI # IRF6618TRPBF
Avnet Americas Trans MOSFET N-CH 30V 30A 7-Pin Direct-FET MT T/R - Tape and Reel (Alt: IRF6618TRPBF) RoHS: Compliant Min Qty: 290 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 23620 Partner Stock
  • 1 $1.2600
  • 25 $1.2300
  • 100 $1.1800
  • 500 $1.1300
  • 1,000 $1.0700
$1.0700 / $1.2600 Buy Now
DISTI # 43710051
Verical Trans MOSFET N-CH Si 30V 30A 7-Pin Direct-FET MT T/R RoHS: Compliant Min Qty: 47 Package Multiple: 1 Date Code: 2032 Americas - 5116
  • 47 $0.6725
  • 50 $0.6588
  • 100 $0.6300
  • 200 $0.6200
  • 500 $0.6188
  • 1,000 $0.6000
  • 2,000 $0.5888
  • 4,800 $0.5850
$0.5850 / $0.6725 Buy Now
Rochester Electronics IRF6618 - DirectFet Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 46
  • 1 $1.2600
  • 25 $1.2300
  • 100 $1.1800
  • 500 $1.1300
  • 1,000 $1.0700
$1.0700 / $1.2600 Buy Now
DISTI # IRF6618TRPBF
TME Transistor: N-MOSFET, unipolar, 30V, 29A, 89W, DirectFET Min Qty: 4800 0
  • 4,800 $2.1000
$2.1000 RFQ
DISTI # C1S322000481745
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 5116
  • 1 $0.5780
  • 10 $0.5380
  • 50 $0.5270
  • 100 $0.5040
  • 200 $0.4960
  • 500 $0.4950
  • 1,000 $0.4800
  • 2,000 $0.4710
  • 4,800 $0.4680
$0.4680 / $0.5780 Buy Now

CAD Models for IRF6618TRPBF by Infineon Technologies AG
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Part Data Attributes for IRF6618TRPBF by Infineon Technologies AG

IRF6618TRPBF
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
210 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
30 A
Drain-source On Resistance-Max
0.0022 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XBCC-N3
JESD-609 Code
e1
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
89 W
Pulsed Drain Current-Max (IDM)
240 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
NO LEAD
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF6618TRPBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3
    VS

Alternate Parts for IRF6618TRPBF

This table gives cross-reference parts and alternative options found for IRF6618TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6618TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF6618 Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 Infineon Technologies AG IRF6618TRPBF vs IRF6618
IRF6618TR1 Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6618TRPBF vs IRF6618TR1
IRF6618PBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3 International Rectifier IRF6618TRPBF vs IRF6618PBF
IRF6618 Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6618TRPBF vs IRF6618
IRF6618TR1PBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6618TRPBF vs IRF6618TR1PBF
Part Number Description Manufacturer Compare
IRF6618 Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 Infineon Technologies AG IRF6618TRPBF vs IRF6618
IRF6618TR1PBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6618TRPBF vs IRF6618TR1PBF
IRF6618TR1 Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6618TRPBF vs IRF6618TR1
IRF6618PBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MT, ISOMETRIC-3 International Rectifier IRF6618TRPBF vs IRF6618PBF

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