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Part Details for IRF630 by STMicroelectronics
Overview of IRF630 by STMicroelectronics
- Distributor Offerings: (30 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF630
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
89K1268
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Newark | N Channel Mosfet, 200V, 9A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:9A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Stmicroelectronics IRF630 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 6 |
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$0.6460 / $1.6400 | Buy Now |
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DISTI #
497-2757-5-ND
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DigiKey | MOSFET N-CH 200V 9A TO220AB Min Qty: 1 Lead time: 26 Weeks Container: Tube |
13636 In Stock |
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$0.5758 / $1.5300 | Buy Now |
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DISTI #
IRF630
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Avnet Americas | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IRF630) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$0.5427 / $0.5660 | Buy Now |
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DISTI #
89K1268
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Avnet Americas | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 Tube - Bulk (Alt: 89K1268) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 53 Weeks, 3 Days Container: Bulk | 0 |
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$0.6780 / $1.3500 | Buy Now |
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DISTI #
511-IRF630
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Mouser Electronics | MOSFET N-Ch 200 Volt 10 Amp RoHS: Compliant | 921 |
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$0.5750 / $1.4800 | Buy Now |
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DISTI #
E02:0323_00207251
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Arrow Electronics | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2251 | Europe - 946 |
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$0.6148 / $1.5074 | Buy Now |
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STMicroelectronics | N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in DPAK package RoHS: Compliant Min Qty: 1 | 925 |
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$0.7800 / $1.4500 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.4 Ohm 31 nC 75 W Mesh overlay™ II Power Mosfet-TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 6800Tube |
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$0.5900 / $0.7200 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.4 Ohm 31 nC 75 W Mesh overlay™ II Power Mosfet-TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 3000Tube |
|
$0.5900 / $0.7050 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.4 Ohm 31 nC 75 W Mesh overlay™ II Power Mosfet-TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 50 Container: Tube | 0Tube |
|
$0.5900 / $0.7050 | Buy Now |
Part Details for IRF630
IRF630 CAD Models
IRF630 Part Data Attributes:
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IRF630
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
IRF630
STMicroelectronics
N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in DPAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 53 Weeks, 3 Days | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 100 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-on Time-Max (ton) | 180 ns |
Alternate Parts for IRF630
This table gives cross-reference parts and alternative options found for IRF630. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF630, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF630 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | IRF630 vs IRF630 |