| New Jersey Semiconductor Products, Inc. |
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$1.3409 / $3.2704
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| STMicroelectronics |
6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN |
$0.2750 / $2.4375
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| Harris Semiconductor |
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.2394 / $0.8750
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| International Rectifier |
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.2750 / $3.6000
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| New Jersey Semiconductor Products Inc |
Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220AB |
$1.5330 / $4.3800
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| Samsung Semiconductor |
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
$0.5625 / $2.2500
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| Motorola Semiconductor Products |
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.3080 / $0.6600
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| Vishay Siliconix |
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
$0.5500 / $1.1000
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| Samsung Electronics Co. Ltd |
IN STOCK SHIP TODAY |
$1.0000 / $1.5400
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| Vishay Huntington |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | MOSFET N-CH 200V 5.2A TO-220AB |
$0.2230 / $0.3344
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 5A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Motorola Mobility LLC |
5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| FCI Semiconductor |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| TT Electronics Power and Hybrid / Semelab Limited |
5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
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| Transys Electronics Limited |
Transistor |
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| Advanced Microelectronic Products Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| General Electric Solid State |
Transistor |
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| Microsemi Corporation |
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 |
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| National Semiconductor Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5A I(D),TO-220AB |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Intersil Corporation |
5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Vishay Intertechnologies |
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN |
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| Texas Instruments |
IRF620 |
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| Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5A I(D),TO-220AB |
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| Diodes Incorporated |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5A I(D),TO-220AB |
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| Zetex / Diodes Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| TT Electronics Resistors |
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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| Rochester Electronics LLC |
5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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