Part Details for IRF612 by National Semiconductor Corporation
Overview of IRF612 by National Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF612
IRF612 CAD Models
IRF612 Part Data Attributes
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IRF612
National Semiconductor Corporation
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Datasheet
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IRF612
National Semiconductor Corporation
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.6A I(D),TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 2.6 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for IRF612
This table gives cross-reference parts and alternative options found for IRF612. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF612, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF612 | 2.6A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF612 vs IRF612 |
| IRF611 | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,3.3A I(D),TO-220AB | National Semiconductor Corporation | IRF612 vs IRF611 |
| RFP2N12 | Power Field-Effect Transistor, 2A I(D), 120V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF612 vs RFP2N12 |
| IRF612 | Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF612 vs IRF612 |
| IRF613 | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,2.6A I(D),TO-220AB | National Semiconductor Corporation | IRF612 vs IRF613 |
| IRF611-009 | Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF612 vs IRF611-009 |
| IRF611 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF612 vs IRF611 |
| IRF613 | 2.6A, 150V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF612 vs IRF613 |
| IRF613PBF | 2.6A, 150V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Infineon Technologies AG | IRF612 vs IRF613PBF |
| IRF612 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF612 vs IRF612 |