Datasheets
IRF540 by:

Power Field-Effect Transistor, 27A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, CASE 221A-09, 3 PIN

Part Details for IRF540 by Motorola Semiconductor Products

Overview of IRF540 by Motorola Semiconductor Products

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Price & Stock for IRF540

Part # Distributor Description Stock Price Buy
Bristol Electronics   115
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB 62
  • 1 $1.3750
  • 5 $1.2650
  • 21 $1.1000
$1.1000 / $1.3750 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 48
  • 1 $2.3332
  • 3 $1.7499
  • 15 $1.4583
$1.4583 / $2.3332 Buy Now
Perfect Parts Corporation   110
RFQ

Part Details for IRF540

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IRF540 Part Data Attributes

IRF540 Motorola Semiconductor Products
Buy Now Datasheet
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IRF540 Motorola Semiconductor Products Power Field-Effect Transistor, 27A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, CASE 221A-09, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description CASE 221A-09, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Avalanche Energy Rating (Eas) 365 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 27 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 300 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 95 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 110 ns
Turn-on Time-Max (ton) 90 ns

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