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Transistors / Power Field-Effect Transistors / IRF512
Datasheets
IRF512 by:
Intersil Corporation
Advanced Microelectronic Products Inc
Fairchild Semiconductor Corporation
FCI Semiconductor
Freescale Semiconductor
General Electric Solid State
Harris Semiconductor
Infineon Technologies AG
International Rectifier
Intersil Corporation
IOR Corporation
Microchip Technology Inc
Motorola Mobility LLC
Motorola Semiconductor Products
National Semiconductor Corporation
New Jersey Semiconductor Products Inc
Rochester Electronics LLC
Samsung Semiconductor
Supertex Inc
Texas Instruments
Thomson Consumer Electronics
Vishay Siliconix
Not Found

4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for IRF512 by Intersil Corporation

Results Overview of IRF512 by Intersil Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

IRF512 Information

IRF512 by Intersil Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRF512

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IRF512 Part Data Attributes

Parametric Data
IRF512 Intersil Corporation
Buy Now Datasheet
Compare Parts:
IRF512 Intersil Corporation 4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.74 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 43 W
Power Dissipation-Max (Abs) 43 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 42 ns
Turn-on Time-Max (ton) 47 ns

Alternate Parts for IRF512

This table gives cross-reference parts and alternative options found for IRF512. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF512, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF540N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF512 vs IRF540N
IRF540N Motorola Mobility LLC Check for Price 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF512 vs IRF540N
IRF540N Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF512 vs IRF540N
IRF512-009 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF512 vs IRF512-009
IRF512-010 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF512 vs IRF512-010
IRF512-006 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF512 vs IRF512-006
IRF540N Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF512 vs IRF540N
Part Number Manufacturer Composite Price Description Compare
IRF540NPBF Infineon Technologies AG $0.4895 Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF512 vs IRF540NPBF
IRF512 Harris Semiconductor Check for Price Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF512 vs IRF512
IRF540NPBF International Rectifier Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF512 vs IRF540NPBF
SUP90N08-8M2P-E3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 90A I(D), 75V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 IRF512 vs SUP90N08-8M2P-E3
IRF2807 International Rectifier Check for Price Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF512 vs IRF2807
SUM90N10-8M2P-E3 Vishay Intertechnologies $2.5710 Power Field-Effect Transistor, 90A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, ROHS COMPLIANT PACKAGE-3 IRF512 vs SUM90N10-8M2P-E3
IRF2807PBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 IRF512 vs IRF2807PBF
SUM90N08-4M8P-E3 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 90A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN IRF512 vs SUM90N08-4M8P-E3
IRF2807 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF512 vs IRF2807
IRF511 Harris Semiconductor Check for Price Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF512 vs IRF511

IRF512 Related Parts

IRF512 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRF512 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 20% of its maximum voltage and current ratings to ensure reliable operation.

  • The junction-to-case thermal resistance (RθJC) for the IRF512 can be calculated using the following formula: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. The datasheet provides a thermal resistance value of 1.5°C/W, which can be used as a rough estimate.

  • The recommended gate drive voltage for the IRF512 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching speed and reduce losses, but may also increase the risk of gate oxide damage.

  • Yes, the IRF512 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a clean, high-frequency signal. Additionally, the device's parasitic capacitances and inductances should be taken into account to minimize ringing and oscillations.

  • To protect the IRF512 from electrostatic discharge (ESD), it's recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, the device should be stored in an anti-static package, and the PCB should be designed with ESD protection in mind, such as using ESD protection diodes or resistors.