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Transistors / Power Field-Effect Transistors / IRF4905LPBF
Datasheets
IRF4905LPBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

Part Details for IRF4905LPBF by International Rectifier

Results Overview of IRF4905LPBF by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRF4905LPBF Information

IRF4905LPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF4905LPBF

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,55V V(BR)DSS,70A I(D),TO-262 15
  • 1 $3.2700
  • 3 $2.4525
  • 11 $2.0438
$2.0438 / $3.2700 Buy Now
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,55V V(BR)DSS,70A I(D),TO-262 8
  • 1 $10.1010
  • 2 $8.4175
  • 4 $7.4074
$7.4074 / $10.1010 Buy Now
Rochester Electronics IRF4905 - 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 2
  • 1 $1.1900
  • 25 $1.1700
  • 100 $1.1200
  • 500 $1.0700
  • 1,000 $1.0100
$1.0100 / $1.1900 Buy Now
Vyrian Transistors 3693
RFQ

Part Details for IRF4905LPBF

IRF4905LPBF CAD Models

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IRF4905LPBF Part Data Attributes

Parametric Data
IRF4905LPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF4905LPBF International Rectifier Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-262AA
Package Description LEAD FREE, TO-262, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 280 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF4905LPBF

This table gives cross-reference parts and alternative options found for IRF4905LPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF4905LPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRF4905L International Rectifier Check for Price Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN IRF4905LPBF vs AUIRF4905L
Part Number Manufacturer Composite Price Description Compare
IRF4905LPBF Infineon Technologies AG $1.6695 Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN IRF4905LPBF vs IRF4905LPBF
IRF4905L Infineon Technologies AG Check for Price Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN IRF4905LPBF vs IRF4905L
IRF4905L International Rectifier Check for Price Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN IRF4905LPBF vs IRF4905L
AUIRF4905L Infineon Technologies AG Check for Price Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN IRF4905LPBF vs AUIRF4905L

IRF4905LPBF Related Parts

IRF4905LPBF Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRF4905LPBF is not explicitly stated in the datasheet. However, it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 80% of its maximum voltage and current ratings to ensure safe operation.

  • The junction-to-case thermal resistance (RθJC) for the IRF4905LPBF is not explicitly stated in the datasheet. However, it can be estimated using the device's package dimensions and thermal conductivity. A common estimate for the RθJC of the IRF4905LPBF is around 0.5-1.0°C/W.

  • The recommended gate drive voltage for the IRF4905LPBF is typically between 10-15V, depending on the specific application and switching frequency. However, it's essential to ensure that the gate drive voltage does not exceed the maximum gate-source voltage rating of 20V.

  • Yes, the IRF4905LPBF can be used in high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the switching frequency does not exceed the device's maximum rated frequency.

  • To calculate the power dissipation of the IRF4905LPBF, you need to consider the device's voltage and current ratings, as well as the switching frequency and duty cycle. A common method is to use the device's RDS(on) and the application's voltage and current waveforms to estimate the power dissipation.