Part Details for IRF150 by International Rectifier
Overview of IRF150 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for IRF150
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, N-Channel, TO-204AE | 1 |
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$36.0000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 14 |
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RFQ | |
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DISTI #
1736789
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element14 Asia-Pacific | RoHS: Not Compliant Min Qty: 1 Container: Each | 0 |
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$19.1911 | Buy Now |
Part Details for IRF150
IRF150 CAD Models
IRF150 Part Data Attributes:
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IRF150
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF150
International Rectifier
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
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| Pbfree Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Part Package Code | BFM | |
| Package Description | HERMETIC SEALED, MODIFIED TO-3, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AE | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 152 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF150
This table gives cross-reference parts and alternative options found for IRF150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF150 | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | Vishay Siliconix | IRF150 vs IRF150 |
| 2N6764-QR-BR1 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | TT Electronics Resistors | IRF150 vs 2N6764-QR-BR1 |
| JANTXV2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Harris Semiconductor | IRF150 vs JANTXV2N6764 |
| IRF150 | 40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | IRF150 vs IRF150 |
| JANTXV2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | IRF150 vs JANTXV2N6764 |
| 2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | IRF150 vs 2N6764 |
| 2N6764-QR-B | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF150 vs 2N6764-QR-B |
| JANTX2N6764 | Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corporation | IRF150 vs JANTX2N6764 |
| 2N6764 | 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Intersil Corporation | IRF150 vs 2N6764 |
| 2N6764PBF | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | International Rectifier | IRF150 vs 2N6764PBF |