Datasheets
IRC640 by:

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN

Part Details for IRC640 by International Rectifier

Overview of IRC640 by International Rectifier

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Price & Stock for IRC640

Part # Distributor Description Stock Price Buy
Bristol Electronics   17
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220VAR 790
  • 1 $3.0300
  • 133 $1.3130
  • 382 $1.2120
$1.2120 / $3.0300 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220VAR 216
  • 1 $3.7500
  • 28 $2.5000
  • 101 $2.3125
$2.3125 / $3.7500 Buy Now

Part Details for IRC640

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IRC640 Part Data Attributes:

IRC640 International Rectifier
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IRC640 International Rectifier Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 5 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220
Package Description TO-220, 5 PIN
Pin Count 5
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 430 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T5
JESD-609 Code e0
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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