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Part Details for IPW65R080CFDA by Infineon Technologies AG
Overview of IPW65R080CFDA by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IPW65R080CFDA
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-IPW65R080CFDA
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Mouser Electronics | MOSFET N-Ch 650V 43.3A TO247-3 RoHS: Compliant | 772 |
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$6.3500 / $11.2100 | Buy Now |
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Bristol Electronics | 273 |
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RFQ | ||
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DISTI #
IPW65R080CFDA
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TME | Transistor: N-MOSFET, unipolar, 650V, 27.4A, 391W, PG-TO247-3 Min Qty: 1 | 0 |
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$13.1600 / $16.9700 | RFQ |
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DISTI #
TMOS1734
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Rutronik | N-CH 650V 43,3A 80mOhm TO247 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube |
Stock DE - 2400 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$6.0900 / $7.8900 | Buy Now |
|
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Win Source Electronics | Metal Oxide Semiconductor Field Effect Transistor | 44489 |
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$4.3340 / $6.5000 | Buy Now |
Part Details for IPW65R080CFDA
IPW65R080CFDA CAD Models
IPW65R080CFDA Part Data Attributes
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IPW65R080CFDA
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW65R080CFDA
Infineon Technologies AG
Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 1160 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 43.3 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 137 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPW65R080CFDA
This table gives cross-reference parts and alternative options found for IPW65R080CFDA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW65R080CFDA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPW65R080CFDFKSA1 | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW65R080CFDA vs IPW65R080CFDFKSA1 |
| IPW65R080CFDAXK | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW65R080CFDA vs IPW65R080CFDAXK |
| IPW65R080CFD | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW65R080CFDA vs IPW65R080CFD |