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Part Details for IPD30N10S3L-34 by Infineon Technologies AG
Overview of IPD30N10S3L-34 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD30N10S3L-34
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPD30N10S3L34
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Mouser Electronics | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T RoHS: Compliant | 242 |
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$0.5700 / $1.3700 | Buy Now |
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Bristol Electronics | 8219 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 100V, 0.0418OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB | 40 |
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$0.6993 / $1.1655 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 100V, 0.0418OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB | 3840 |
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$0.3927 / $1.7850 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 100V, 0.0418OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AB | 2000 |
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$1.0140 / $2.7040 | Buy Now |
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DISTI #
SMC-IPD30N10S3L-34
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 20181126 | 10 |
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RFQ | |
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DISTI #
SMC-IPD30N10S3L-34
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 20181008 | 86 |
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RFQ | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2024 Date Code: 2024 | 2500 |
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$0.6760 / $1.9040 | Buy Now |
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LCSC | TO-252-3 MOSFETs ROHS | 189 |
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$0.4477 / $1.5936 | Buy Now |
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Sense Electronic Company Limited | TO-252 | 2500 |
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RFQ |
Part Details for IPD30N10S3L-34
IPD30N10S3L-34 CAD Models
IPD30N10S3L-34 Part Data Attributes:
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IPD30N10S3L-34
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD30N10S3L-34
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AB | |
| Package Description | GREEN, PLASTIC, TO-252, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 138 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0418 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 68 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD30N10S3L-34
This table gives cross-reference parts and alternative options found for IPD30N10S3L-34. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD30N10S3L-34, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK3647-01 | Power Field-Effect Transistor, 30A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN | Fuji Electric Co Ltd | IPD30N10S3L-34 vs 2SK3647-01 |
| 934055808127 | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | IPD30N10S3L-34 vs 934055808127 |
| HUF75631S3S | 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | IPD30N10S3L-34 vs HUF75631S3S |
| IRF540NSHR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 | International Rectifier | IPD30N10S3L-34 vs IRF540NSHR |
| NTE2930 | Power Field-Effect Transistor, 31A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | NTE Electronics Inc | IPD30N10S3L-34 vs NTE2930 |