Datasheets
IPD090N03LGBTMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

Part Details for IPD090N03LGBTMA1 by Infineon Technologies AG

Overview of IPD090N03LGBTMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IPD090N03LGBTMA1

Part # Distributor Description Stock Price Buy
DISTI # IPD090N03LGBTMA1-ND
DigiKey MOSFET N-CH 30V 40A TO252-3 Min Qty: 2500 Lead time: 20 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 2,500 $0.2394
  • 5,000 $0.2268
  • 12,500 $0.2099
  • 25,000 $0.2079
$0.2079 / $0.2394 Buy Now
DISTI # SP000236950
EBV Elektronik Trans MOSFET N-CH 30V 40A 3-Pin TO-252 T/R (Alt: SP000236950) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 71 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPD090N03LGBTMA1

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IPD090N03LGBTMA1 Part Data Attributes:

IPD090N03LGBTMA1 Infineon Technologies AG
Buy Now Datasheet
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IPD090N03LGBTMA1 Infineon Technologies AG Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-3/2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 40 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.0135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 280 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPD090N03LGBTMA1

This table gives cross-reference parts and alternative options found for IPD090N03LGBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD090N03LGBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD090N03LG Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPD090N03LGBTMA1 vs IPD090N03LG
Part Number Description Manufacturer Compare
IRLR7811WPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IPD090N03LGBTMA1 vs IRLR7811WPBF
IPD105N03LG Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD090N03LGBTMA1 vs IPD105N03LG
H7N0310LM 30A, 30V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation IPD090N03LGBTMA1 vs H7N0310LM
H7N0310LM Power Field-Effect Transistor, 30A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 Hitachi Ltd IPD090N03LGBTMA1 vs H7N0310LM
IRLR7811WTRRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IPD090N03LGBTMA1 vs IRLR7811WTRRPBF
IRLR7811WTRLPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IPD090N03LGBTMA1 vs IRLR7811WTRLPBF
IRLR8729PBF Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier IPD090N03LGBTMA1 vs IRLR8729PBF
IRLR7811WTRL Power Field-Effect Transistor, 64A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IPD090N03LGBTMA1 vs IRLR7811WTRL
IRLR7811WTR Power Field-Effect Transistor, 64A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IPD090N03LGBTMA1 vs IRLR7811WTR
IRLR7811WCTRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D-PAK, 3 PIN International Rectifier IPD090N03LGBTMA1 vs IRLR7811WCTRPBF

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