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Overview of H7N0310LM by Renesas Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for H7N0310LM by Renesas Electronics Corporation
Part Data Attributes for H7N0310LM by Renesas Electronics Corporation
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Part Life Cycle Code
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Not Recommended
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Ihs Manufacturer
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RENESAS ELECTRONICS CORP
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Package Description
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LDPAK-3
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Pin Count
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3
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
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30 A
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Drain-source On Resistance-Max
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0.019 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-PSSO-G2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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50 W
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Pulsed Drain Current-Max (IDM)
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120 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for H7N0310LM
This table gives cross-reference parts and alternative options found for H7N0310LM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H7N0310LM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR8729TRLPBF | Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | International Rectifier | H7N0310LM vs IRLR8729TRLPBF |
| IPD090N03LGATMA1 | Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | H7N0310LM vs IPD090N03LGATMA1 |
| IPB080N03LGATMA1 | Power Field-Effect Transistor, 48A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | H7N0310LM vs IPB080N03LGATMA1 |
| IRLR7811WTRRPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | H7N0310LM vs IRLR7811WTRRPBF |
| IRLR7811WCPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D-PAK, 3 PIN | International Rectifier | H7N0310LM vs IRLR7811WCPBF |
| IPB147N03LGATMA1 | Power Field-Effect Transistor, 20A I(D), 30V, 0.0217ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | H7N0310LM vs IPB147N03LGATMA1 |
| IRLR7811WTRR | Power Field-Effect Transistor, 64A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | H7N0310LM vs IRLR7811WTRR |
| IRLR7811WCTRLPBF | Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D-PAK, 3 PIN | International Rectifier | H7N0310LM vs IRLR7811WCTRLPBF |
| IPD090N03LGE8177 | Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | H7N0310LM vs IPD090N03LGE8177 |
| AP60T03AS | TRANSISTOR 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | H7N0310LM vs AP60T03AS |