Part Details for IPB65R380C6ATMA1 by Infineon Technologies AG
Overview of IPB65R380C6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPB65R380C6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Rochester Electronics | IPB65R380 - 650V and 700V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 17123 |
|
$0.7933 / $0.9333 | Buy Now |
|
DISTI #
IPB65R380C6ATMA1
|
TME | Transistor: N-MOSFET, unipolar, 650V, 10.6A, 83W, PG-TO263-3 Min Qty: 1 | 0 |
|
$1.1300 / $1.8800 | RFQ |
Part Details for IPB65R380C6ATMA1
IPB65R380C6ATMA1 CAD Models
IPB65R380C6ATMA1 Part Data Attributes:
|
|
IPB65R380C6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB65R380C6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 215 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 10.6 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 29 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB65R380C6ATMA1
This table gives cross-reference parts and alternative options found for IPB65R380C6ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB65R380C6ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AOD11S60 | Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, DPAK-3 | Alpha & Omega Semiconductor | IPB65R380C6ATMA1 vs AOD11S60 |
| IPB60R380C6ATMA1 | Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB65R380C6ATMA1 vs IPB60R380C6ATMA1 |
| TK12E60U | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | IPB65R380C6ATMA1 vs TK12E60U |
| IPB65R380C6 | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IPB65R380C6ATMA1 vs IPB65R380C6 |
| SPP11N60S5XKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPB65R380C6ATMA1 vs SPP11N60S5XKSA1 |
| NDD60N360U1-1G | Power MOSFET 600V 11A 360 mOhm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE | onsemi | IPB65R380C6ATMA1 vs NDD60N360U1-1G |
| SSF11NS60D | Power Field-Effect Transistor, 11A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3/2 | Suzhou Good-Ark Electronics Co Ltd | IPB65R380C6ATMA1 vs SSF11NS60D |
| SPP11N60S5HKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPB65R380C6ATMA1 vs SPP11N60S5HKSA1 |
| STW12NM60N | 10A, 600V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | IPB65R380C6ATMA1 vs STW12NM60N |
| TSM60N380CZC0G | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Taiwan Semiconductor | IPB65R380C6ATMA1 vs TSM60N380CZC0G |