Part Details for SSF11NS60D by Suzhou Good-Ark Electronics Co Ltd
Overview of SSF11NS60D by Suzhou Good-Ark Electronics Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
Part Details for SSF11NS60D
SSF11NS60D CAD Models
SSF11NS60D Part Data Attributes:
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SSF11NS60D
Suzhou Good-Ark Electronics Co Ltd
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Datasheet
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SSF11NS60D
Suzhou Good-Ark Electronics Co Ltd
Power Field-Effect Transistor, 11A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | GOOD-ARK ELECTRONICS CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 281 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.41 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SSF11NS60D
This table gives cross-reference parts and alternative options found for SSF11NS60D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSF11NS60D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB65R380C6 | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | SSF11NS60D vs IPB65R380C6 |
| NDD60N360U1-35G | Power MOSFET 600V 11A 360 mOhm Single N-Channel DPAK, 3.5 mm IPAK, Straight Lead, 75-TUBE | onsemi | SSF11NS60D vs NDD60N360U1-35G |
| TK12E60U | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | SSF11NS60D vs TK12E60U |
| STW12NM60N | 10A, 600V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | SSF11NS60D vs STW12NM60N |
| AOD11S60 | Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, DPAK-3 | Alpha & Omega Semiconductor | SSF11NS60D vs AOD11S60 |
| R6012JNJTL | Power Field-Effect Transistor, | ROHM Semiconductor | SSF11NS60D vs R6012JNJTL |
| SPP11N60S5XKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SSF11NS60D vs SPP11N60S5XKSA1 |
| R6011END3TL1 | Power Field-Effect Transistor, | ROHM Semiconductor | SSF11NS60D vs R6011END3TL1 |
| IPB60R380C6ATMA1 | Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SSF11NS60D vs IPB60R380C6ATMA1 |
| IPB65R380C6ATMA1 | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SSF11NS60D vs IPB65R380C6ATMA1 |