Part Details for IPB038N12N3G by Rochester Electronics LLC
Overview of IPB038N12N3G by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IPB038N12N3G
IPB038N12N3G CAD Models
IPB038N12N3G Part Data Attributes
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IPB038N12N3G
Rochester Electronics LLC
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Datasheet
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IPB038N12N3G
Rochester Electronics LLC
120A, 120V, 0.0038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Part Package Code | D2PAK | |
Package Description | GREEN, PLASTIC, TO-263, D2PAK-3 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 900 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 120 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0038 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | NOT SPECIFIED | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Qualification Status | COMMERCIAL | |
Surface Mount | YES | |
Terminal Finish | NOT SPECIFIED | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB038N12N3G
This table gives cross-reference parts and alternative options found for IPB038N12N3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB038N12N3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPB038N12N3G | Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB038N12N3G vs IPB038N12N3G |