IPB038N12N3G
vs
IPB038N12N3G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Not Recommended
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
INFINEON TECHNOLOGIES AG
Part Package Code
D2PAK
D2PAK
Package Description
GREEN, PLASTIC, TO-263, D2PAK-3
GREEN, PLASTIC, TO-263, D2PAK-3
Pin Count
4
4
Reach Compliance Code
unknown
not_compliant
Avalanche Energy Rating (Eas)
900 mJ
900 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
120 V
120 V
Drain Current-Max (ID)
120 A
120 A
Drain-source On Resistance-Max
0.0038 Ω
0.0038 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Moisture Sensitivity Level
NOT SPECIFIED
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
480 A
480 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
YES
Terminal Finish
NOT SPECIFIED
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
ECCN Code
EAR99
JESD-609 Code
e3
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
300 W