Part Details for IPA65R380C6 by Infineon Technologies AG
Overview of IPA65R380C6 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPA65R380C6
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPA65R380C6
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Mouser Electronics | MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS C6 RoHS: Compliant | 0 |
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$1.0200 / $2.3600 | Order Now |
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Chip1Cloud | 650V CoolMOS C6 Power Transistor | 7000 |
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RFQ |
Part Details for IPA65R380C6
IPA65R380C6 CAD Models
IPA65R380C6 Part Data Attributes
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IPA65R380C6
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPA65R380C6
Infineon Technologies AG
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 215 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 10.6 A | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 31 W | |
Pulsed Drain Current-Max (IDM) | 29 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPA65R380C6
This table gives cross-reference parts and alternative options found for IPA65R380C6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPA65R380C6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPA60R380C6XKSA1 | Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 | Infineon Technologies AG | IPA65R380C6 vs IPA60R380C6XKSA1 |
TK10A60W | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | IPA65R380C6 vs TK10A60W |
IPA60R380C6 | Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IPA65R380C6 vs IPA60R380C6 |
IPA65R380C6XKSA1 | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPACK-3 | Infineon Technologies AG | IPA65R380C6 vs IPA65R380C6XKSA1 |