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Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IKW08T120
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Mouser Electronics | IGBT Transistors LOW LOSS DuoPack 1200V 8A RoHS: Compliant | 823 |
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$1.6700 / $3.4400 | Buy Now |
DISTI #
IKW08T120
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TME | Transistor: IGBT, 1.2kV, 8A, 70W, TO247-3 Min Qty: 1 | 57 |
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$2.3400 / $3.1500 | Buy Now |
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Chip1Cloud | IGBT 1200V 16A 70W TO247-3 | 1930 |
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RFQ | |
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CHIPMALL.COM LIMITED | TO-247-3 IGBTs ROHS | 9540 |
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$1.6261 / $2.8767 | Buy Now |
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Win Source Electronics | IGBT 1200V 16A 70W TO247-3 | 79834 |
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$1.5270 / $2.2900 | Buy Now |
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Wuhan P&S | 1200V,16A,IGBT with Anti-Parallel Diode Min Qty: 1 | 60 |
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$1.4800 / $2.0800 | Buy Now |
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IKW08T120
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKW08T120
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247AC | |
Package Description | TO-247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 16 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 710 ns | |
Turn-on Time-Nom (ton) | 66 ns |
This table gives cross-reference parts and alternative options found for IKW08T120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKW08T120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HGT1S3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | IKW08T120 vs HGT1S3N60B3S |
HGTP7N60B3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | IKW08T120 vs HGTP7N60B3 |
GT10J312 | TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, 2-10S1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | IKW08T120 vs GT10J312 |
IXSH35N100A | Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IKW08T120 vs IXSH35N100A |
IKA06N60TXKSA1 | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IKW08T120 vs IKA06N60TXKSA1 |
IRG4PC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IKW08T120 vs IRG4PC50U |
IRG4PC30KD | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IKW08T120 vs IRG4PC30KD |
IXGH28N60BD1 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IKW08T120 vs IXGH28N60BD1 |
HGTP7N60A4D | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Fairchild Semiconductor Corporation | IKW08T120 vs HGTP7N60A4D |
SGH40N60UFD | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Samsung Semiconductor | IKW08T120 vs SGH40N60UFD |