Part Details for IKP15N60T by Infineon Technologies AG
Overview of IKP15N60T by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IKP15N60T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IKP15N60T
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Mouser Electronics | IGBT Transistors LOW LOSS DuoPack 600V 15A RoHS: Compliant | 0 |
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$0.9010 / $2.0000 | Order Now |
DISTI #
IKP15N60T
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TME | Transistor: IGBT, 600V, 15A, 130W, TO220-3 Min Qty: 1 | 166 |
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$1.1500 / $1.9200 | Buy Now |
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CHIPMALL.COM LIMITED | TO-220 IGBTs ROHS | 453 |
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$0.9110 / $1.4973 | Buy Now |
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LCSC | TO-220 IGBTs ROHS | 453 |
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$0.9296 / $1.5279 | Buy Now |
Part Details for IKP15N60T
IKP15N60T CAD Models
IKP15N60T Part Data Attributes:
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IKP15N60T
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKP15N60T
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH SPEED | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 30 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 5.7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 130 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 291 ns | |
Turn-on Time-Nom (ton) | 32 ns |
Alternate Parts for IKP15N60T
This table gives cross-reference parts and alternative options found for IKP15N60T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKP15N60T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | IKP15N60T vs GT15H101 |
IRGBC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IKP15N60T vs IRGBC30FD2 |
IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | IKP15N60T vs IRGPC50U |
HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | IKP15N60T vs HGTD7N60C3S9A |
IRG4BC20W-STRLPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IKP15N60T vs IRG4BC20W-STRLPBF |
IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | IKP15N60T vs IXGH36N60A3D4 |
IRG4PH50UD | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IKP15N60T vs IRG4PH50UD |
HGTG10N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | IKP15N60T vs HGTG10N120BND |
HGTP12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | IKP15N60T vs HGTP12N60C3DR |
IXGH12N60BD1 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IKP15N60T vs IXGH12N60BD1 |