Datasheets
IHW20T120 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN

Part Details for IHW20T120 by Infineon Technologies AG

Overview of IHW20T120 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Part Details for IHW20T120

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IHW20T120 Part Data Attributes:

IHW20T120 Infineon Technologies AG
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IHW20T120 Infineon Technologies AG Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-247AC
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 178 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 790 ns
Turn-on Time-Nom (ton) 82 ns

Alternate Parts for IHW20T120

This table gives cross-reference parts and alternative options found for IHW20T120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IHW20T120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
GT15H101 TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IHW20T120 vs GT15H101
IRGBC30FD2 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IHW20T120 vs IRGBC30FD2
IRGPC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC International Rectifier IHW20T120 vs IRGPC50U
HGTD7N60C3S9A 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL onsemi IHW20T120 vs HGTD7N60C3S9A
IRG4BC20W-STRLPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IHW20T120 vs IRG4BC20W-STRLPBF
IXGH36N60A3D4 Insulated Gate Bipolar Transistor, Littelfuse Inc IHW20T120 vs IXGH36N60A3D4
IRG4PH50UD Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IHW20T120 vs IRG4PH50UD
HGTG10N120BND 1200V, NPT IGBT, 450-TUBE onsemi IHW20T120 vs HGTG10N120BND
HGTP12N60C3DR Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IHW20T120 vs HGTP12N60C3DR
IXGH12N60BD1 Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IHW20T120 vs IXGH12N60BD1

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