Datasheets
IGB30N60H3ATMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IGB30N60H3ATMA1 by Infineon Technologies AG

Overview of IGB30N60H3ATMA1 by Infineon Technologies AG

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Price & Stock for IGB30N60H3ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 49AC0265
Newark Igbt, 600V, 60A, 175Deg C, 187W, Continuous Collector Current:60A, Collector Emitter Saturation Voltage:1.95V, Power Dissipation:187W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IGB30N60H3ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 14
  • 1 $1.7500
  • 10 $1.7500
  • 25 $1.6100
  • 50 $1.6100
  • 100 $1.6100
  • 250 $1.4800
  • 500 $1.4800
$1.4800 / $1.7500 Buy Now
DISTI # 86AK5141
Newark Igbt, Single, 600V, 60A, To-263 Rohs Compliant: Yes |Infineon IGB30N60H3ATMA1 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $1.4200
  • 2,000 $1.3800
  • 4,000 $1.3600
  • 6,000 $1.3300
$1.3300 / $1.4200 Buy Now
DISTI # IGB30N60H3ATMA1CT-ND
DigiKey IGBT TRENCH FS 600V 60A TO263-3 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1502
In Stock
  • 1 $2.9500
  • 10 $2.4510
  • 100 $1.9510
  • 500 $1.6508
  • 1,000 $1.4007
  • 2,000 $1.3307
  • 5,000 $1.2807
$1.2807 / $2.9500 Buy Now
DISTI # IGB30N60H3ATMA1
Avnet Americas Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB30N60H3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.5354
$1.5354 Buy Now
DISTI # 49AC0265
Avnet Americas Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263 - Product that comes on tape, but is not reeled (Alt: 49AC0265) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack 14 Partner Stock
  • 1 $2.8400
$2.8400 Buy Now
Bristol Electronics   172
RFQ
DISTI # IGB30N60H3ATMA1
Avnet Americas Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB30N60H3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.5354
$1.5354 Buy Now
DISTI # 49AC0265
Avnet Americas Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263 - Product that comes on tape, but is not reeled (Alt: 49AC0265) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack 14 Partner Stock
  • 1 $2.8400
$2.8400 Buy Now
DISTI # IGB30N60H3
TME Transistor: IGBT, 600V, 30A, 187W, D2PAK Min Qty: 1 0
  • 1 $2.5400
  • 5 $2.2900
  • 25 $2.1200
  • 100 $2.1100
$2.1100 / $2.5400 RFQ
DISTI # SP000852240
EBV Elektronik Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263 (Alt: SP000852240) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days EBV - 1000
Buy Now

Part Details for IGB30N60H3ATMA1

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IGB30N60H3ATMA1 Part Data Attributes:

IGB30N60H3ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IGB30N60H3ATMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 5 Days
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 262 ns
Turn-on Time-Nom (ton) 40 ns

Alternate Parts for IGB30N60H3ATMA1

This table gives cross-reference parts and alternative options found for IGB30N60H3ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGB30N60H3ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXGH34N60B2 Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IGB30N60H3ATMA1 vs IXGH34N60B2
APT36GA60S Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3PAK-3 Microsemi Corporation IGB30N60H3ATMA1 vs APT36GA60S
IXGT30N60C2 Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-268AA, TO-268, 3 PIN IXYS Corporation IGB30N60H3ATMA1 vs IXGT30N60C2
IXGP30N60C2 Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN IXYS Corporation IGB30N60H3ATMA1 vs IXGP30N60C2

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