There are no models available for this part yet.
Overview of HYS72D128320GBR-5-B by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Computing and Data Storage
CAD Models for HYS72D128320GBR-5-B by Infineon Technologies AG
Part Data Attributes for HYS72D128320GBR-5-B by Infineon Technologies AG
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Part Package Code
|
DIMM
|
|
Package Description
|
DIMM, DIMM184
|
|
Pin Count
|
184
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.36
|
|
Access Mode
|
DUAL BANK PAGE BURST
|
|
Access Time-Max
|
0.7 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK)
|
200 MHz
|
|
I/O Type
|
COMMON
|
|
JESD-30 Code
|
R-XDMA-N184
|
|
Memory Density
|
9663676416 bit
|
|
Memory IC Type
|
DDR DRAM MODULE
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|
Memory Width
|
72
|
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Number of Functions
|
1
|
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Number of Ports
|
1
|
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Number of Terminals
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184
|
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Number of Words
|
134217728 words
|
|
Number of Words Code
|
128000000
|
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Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
128MX72
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
UNSPECIFIED
|
|
Package Code
|
DIMM
|
|
Package Equivalence Code
|
DIMM184
|
|
Package Shape
|
RECTANGULAR
|
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Package Style
|
MICROELECTRONIC ASSEMBLY
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
|
Self Refresh
|
YES
|
|
Supply Current-Max
|
7.018 mA
|
|
Supply Voltage-Max (Vsup)
|
2.7 V
|
|
Supply Voltage-Min (Vsup)
|
2.5 V
|
|
Supply Voltage-Nom (Vsup)
|
2.6 V
|
|
Surface Mount
|
NO
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Form
|
NO LEAD
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Terminal Pitch
|
1.27 mm
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Terminal Position
|
DUAL
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Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Alternate Parts for HYS72D128320GBR-5-B
This table gives cross-reference parts and alternative options found for HYS72D128320GBR-5-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYS72D128320GBR-5-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT18VDDT12872AY-202XX | DDR DRAM Module, 128MX72, 0.8ns, CMOS, MO-206, DIMM-184 | Micron Technology Inc | HYS72D128320GBR-5-B vs MT18VDDT12872AY-202XX |
| HYMD512G726L4-L | DDR DRAM Module, 128MX72, 0.8ns, CMOS, 5.250 X 1.700 X 0.150 INCH, DIMM-184 | SK Hynix Inc | HYS72D128320GBR-5-B vs HYMD512G726L4-L |
| MT36VDDT12872Y-265A1 | DDR DRAM Module, 128MX72, 0.75ns, CMOS, MO-206, DIMM-184 | Micron Technology Inc | HYS72D128320GBR-5-B vs MT36VDDT12872Y-265A1 |
| W3EG72125S262AJD3M | DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184 | Microsemi Corporation | HYS72D128320GBR-5-B vs W3EG72125S262AJD3M |
| W3EG72126S263AJD3SF | DDR DRAM Module, 128MX72, 0.75ns, CMOS, LEAD FREE, DIMM-184 | Microsemi Corporation | HYS72D128320GBR-5-B vs W3EG72126S263AJD3SF |
| M312L2923BUS-CA0 | DDR DRAM Module, 128MX72, 0.8ns, CMOS, DIMM-184 | Samsung Semiconductor | HYS72D128320GBR-5-B vs M312L2923BUS-CA0 |
| W3EG128M72ETSU202AJD3 | DDR DRAM Module, 128MX72, 0.8ns, CMOS, DIMM-184 | Microsemi Corporation | HYS72D128320GBR-5-B vs W3EG128M72ETSU202AJD3 |
| HYMD525G726BSP4-L | DDR DRAM Module, 128MX72, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | SK Hynix Inc | HYS72D128320GBR-5-B vs HYMD525G726BSP4-L |
| M383L2920MT1-CA2 | DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | HYS72D128320GBR-5-B vs M383L2920MT1-CA2 |
| MT36VDDF12872Y-40BXX | DDR DRAM Module, 128MX72, 0.7ns, CMOS, LEAD FREE, DIMM-184 | Micron Technology Inc | HYS72D128320GBR-5-B vs MT36VDDF12872Y-40BXX |