Part Details for HYMP564S64P6-E3 by SK Hynix Inc
Results Overview of HYMP564S64P6-E3 by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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HYMP564S64P6-E3 Information
HYMP564S64P6-E3 by SK Hynix Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for HYMP564S64P6-E3
HYMP564S64P6-E3 CAD Models
HYMP564S64P6-E3 Part Data Attributes
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HYMP564S64P6-E3
SK Hynix Inc
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Datasheet
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HYMP564S64P6-E3
SK Hynix Inc
DDR DRAM Module, 64MX64, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-200
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SK HYNIX INC | |
Part Package Code | DIMM | |
Package Description | DIMM, DIMM200,24 | |
Pin Count | 200 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 0.6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 200 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XZMA-N200 | |
Memory Density | 4294967296 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 200 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 55 °C | |
Operating Temperature-Min | ||
Organization | 64MX64 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM200,24 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Self Refresh | YES | |
Standby Current-Max | 0.024 A | |
Supply Current-Max | 1.56 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Pitch | 0.6 mm | |
Terminal Position | ZIG-ZAG | |
Time@Peak Reflow Temperature-Max (s) | 20 |
Alternate Parts for HYMP564S64P6-E3
This table gives cross-reference parts and alternative options found for HYMP564S64P6-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYMP564S64P6-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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M470T6554EZ3-CCC | Samsung Semiconductor | Check for Price | DDR DRAM Module, 64MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | HYMP564S64P6-E3 vs M470T6554EZ3-CCC |
MT16HTF6464HY-40EXX | Micron Technology Inc | Check for Price | DDR DRAM Module, 64MX64, 0.6ns, CMOS, LEAD FREE, SODIMM-200 | HYMP564S64P6-E3 vs MT16HTF6464HY-40EXX |
M470T6554BZ3-LCC | Samsung Semiconductor | Check for Price | DDR DRAM Module, 64MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | HYMP564S64P6-E3 vs M470T6554BZ3-LCC |
HYMP564S64CLP6-E3 | SK Hynix Inc | Check for Price | DDR DRAM Module, 64MX64, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-200 | HYMP564S64P6-E3 vs HYMP564S64CLP6-E3 |
EBE52UD6AHSA-4A-E | Elpida Memory Inc | Check for Price | DDR DRAM Module, 64MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | HYMP564S64P6-E3 vs EBE52UD6AHSA-4A-E |
HYMP564S64CP6-E3 | SK Hynix Inc | Check for Price | DDR DRAM Module, 64MX64, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-200 | HYMP564S64P6-E3 vs HYMP564S64CP6-E3 |
WV3HG232M64EEU403D4M | Microsemi Corporation | Check for Price | DDR DRAM Module, 64MX64, 0.6ns, CMOS, SODIMM-200 | HYMP564S64P6-E3 vs WV3HG232M64EEU403D4M |
M470T6554CZ3-CCC | Samsung Semiconductor | Check for Price | DDR DRAM Module, 64MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | HYMP564S64P6-E3 vs M470T6554CZ3-CCC |
MT8HTF6464HDG-40EXX | Micron Technology Inc | Check for Price | DDR DRAM Module, 64MX64, 0.6ns, CMOS, SODIMM-200 | HYMP564S64P6-E3 vs MT8HTF6464HDG-40EXX |
WV3HG232M64EEU403D4S | Microsemi Corporation | Check for Price | DDR DRAM Module, 64MX64, 0.6ns, CMOS, SODIMM-200 | HYMP564S64P6-E3 vs WV3HG232M64EEU403D4S |