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Memory / DRAMs / HYB3117400BJ-50
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HYB3117400BJ-50 by:

Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO26, 0.300 INCH, PLASTIC, SO-26

Part Details for HYB3117400BJ-50 by Siemens

Overview of HYB3117400BJ-50 by Siemens

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Applications Consumer Electronics Computing and Data Storage

Part Details for HYB3117400BJ-50

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HYB3117400BJ-50 Part Data Attributes

Parametric Data
HYB3117400BJ-50 Siemens
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HYB3117400BJ-50 Siemens Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO26, 0.300 INCH, PLASTIC, SO-26
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code SOIC
Package Description ,
Pin Count 26
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code R-PDSO-J26
Memory Density 16777216 bit
Memory IC Type FAST PAGE DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 26
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 2048
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form J BEND
Terminal Position DUAL

Alternate Parts for HYB3117400BJ-50

This table gives cross-reference parts and alternative options found for HYB3117400BJ-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB3117400BJ-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB3116400BJ-50 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO26, 0.300 INCH, PLASTIC, SO-26 Siemens HYB3117400BJ-50 vs HYB3116400BJ-50
MN41V17400SJ-05 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Panasonic Electronic Components HYB3117400BJ-50 vs MN41V17400SJ-05
HYB3117400BJ-50 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Infineon Technologies AG HYB3117400BJ-50 vs HYB3117400BJ-50
K4F170412D-BL500 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Samsung Semiconductor HYB3117400BJ-50 vs K4F170412D-BL500
HY51V17400CJ-50 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 SK Hynix Inc HYB3117400BJ-50 vs HY51V17400CJ-50
VG26V17400FJ-5 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Vanguard International Semiconductor Corporation HYB3117400BJ-50 vs VG26V17400FJ-5
MB81V17400B-50PJ 4MX4 FAST PAGE DRAM, 50ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 FUJITSU Semiconductor Limited HYB3117400BJ-50 vs MB81V17400B-50PJ
HY51V16400HGLJ-5 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 SK Hynix Inc HYB3117400BJ-50 vs HY51V16400HGLJ-5
K4F170412D-BC500 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Samsung Semiconductor HYB3117400BJ-50 vs K4F170412D-BC500
K4F170412C-BC500 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24 Samsung Semiconductor HYB3117400BJ-50 vs K4F170412C-BC500
Part Number Description Manufacturer Compare
MCM516405CJ70 EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, SOJ-26/24 Motorola Semiconductor Products HYB3117400BJ-50 vs MCM516405CJ70
MCM517405CJ70 4MX4 EDO DRAM, 70ns, PDSO24, 0.300 INCH, SOJ-26/24 Motorola Mobility LLC HYB3117400BJ-50 vs MCM517405CJ70
MSM5117400F-70SJ Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB3117400BJ-50 vs MSM5117400F-70SJ
HYB3116400BJ-50 Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO26, 0.300 INCH, PLASTIC, SO-26 Siemens HYB3117400BJ-50 vs HYB3116400BJ-50
MSM51V16405FSL-60SJ EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB3117400BJ-50 vs MSM51V16405FSL-60SJ
MSM51V16405F-70SJ EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB3117400BJ-50 vs MSM51V16405F-70SJ
TC5117440BSJ-50 IC 4M X 4 OTHER DRAM, 50 ns, PDSO26, SOJ-26, Dynamic RAM Toshiba America Electronic Components HYB3117400BJ-50 vs TC5117440BSJ-50
MSM5117405F-60SJ EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB3117400BJ-50 vs MSM5117405F-60SJ
MSM51V16405FSL-70SJ EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB3117400BJ-50 vs MSM51V16405FSL-70SJ
MSM51V16405F-50SJ EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 OKI Electric Industry Co Ltd HYB3117400BJ-50 vs MSM51V16405F-50SJ

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