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Transistors Power Field-Effect Transistors HUFA76429D3ST

HUFA76429D3ST
Description: Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Overview of HUFA76429D3ST by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for HUFA76429D3ST by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   2500
RFQ
Bristol Electronics   2294
RFQ
Quest Components   2000
  • 1 $2.0750
  • 194 $0.8300
  • 965 $0.7263
$0.7263 / $2.0750 Buy Now
Rochester Electronics HUF76429D - N-Channel Logic Level UltraFET Power MOSFET 60V, 20A ' RoHS: Compliant Status: Obsolete Min Qty: 1 113
  • 1 $0.9328
  • 25 $0.9141
  • 100 $0.8768
  • 500 $0.8395
  • 1,000 $0.7929
$0.7929 / $0.9328 Buy Now

CAD Models for HUFA76429D3ST by Fairchild Semiconductor Corporation
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Part Data Attributes for HUFA76429D3ST by Fairchild Semiconductor Corporation
Parametric Data

HUFA76429D3ST
Fairchild Semiconductor Corporation
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
20 A
Drain-source On Resistance-Max
0.029 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
110 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. HUFA76429D3ST
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
    VS

Alternate Parts for HUFA76429D3ST

This table gives cross-reference parts and alternative options found for HUFA76429D3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUFA76429D3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HUFA76429D3ST-F085 N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 27mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified onsemi HUFA76429D3ST vs HUFA76429D3ST-F085
HUFA76429D3ST_F085 60V, 20A, 20.5mΩ, DPAK N-Channel UltraFET®, TO-252 3L (DPAK), 5000-TAPE REEL onsemi HUFA76429D3ST vs HUFA76429D3ST_F085
HUFA76429D3S Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUFA76429D3ST vs HUFA76429D3S
HUFA76429D3S 20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUFA76429D3ST vs HUFA76429D3S
HUFA76429D3ST_F085 Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation HUFA76429D3ST vs HUFA76429D3ST_F085
Part Number Description Manufacturer Compare
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG HUFA76429D3ST vs IRFZ24N
2SK2412 20A, 60V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN Renesas Electronics Corporation HUFA76429D3ST vs 2SK2412
BUZ11A 30A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited HUFA76429D3ST vs BUZ11A
NTD18N06G TRANSISTOR 18 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3, FET General Purpose Power onsemi HUFA76429D3ST vs NTD18N06G
IRLZ24N Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG HUFA76429D3ST vs IRLZ24N
RFD14N05 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation HUFA76429D3ST vs RFD14N05
2SJ602-ZJ 20A, 60V, 0.107ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN Renesas Electronics Corporation HUFA76429D3ST vs 2SJ602-ZJ
PHD20N06T,118 PHD20N06T - N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin Nexperia HUFA76429D3ST vs PHD20N06T,118
PHD21N06LT,118 N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin Nexperia HUFA76429D3ST vs PHD21N06LT,118
IRFR1205PBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG HUFA76429D3ST vs IRFR1205PBF

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