-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 27mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Rochester Electronics | HUF76429D_F085 - N-Channel Logic Level UltraFET Power MOSFET 60V, 20A RoHS: Compliant Status: Obsolete Min Qty: 1 | 5282 |
|
$0.7854 / $0.9240 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
HUFA76429D3ST-F085
onsemi
Buy Now
Datasheet
|
Compare Parts:
HUFA76429D3ST-F085
onsemi
N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 27mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-252 3L (DPAK) | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.029 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for HUFA76429D3ST-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUFA76429D3ST-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HUFA76429D3S | 20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | HUFA76429D3ST-F085 vs HUFA76429D3S |
HUFA76429D3ST_F085 | 60V, 20A, 20.5mΩ, DPAK N-Channel UltraFET®, TO-252 3L (DPAK), 5000-TAPE REEL | onsemi | HUFA76429D3ST-F085 vs HUFA76429D3ST_F085 |
HUFA76429D3ST | Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | HUFA76429D3ST-F085 vs HUFA76429D3ST |