Datasheets
HUFA76429D3ST-F085 by:

N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 27mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified

Part Details for HUFA76429D3ST-F085 by onsemi

Overview of HUFA76429D3ST-F085 by onsemi

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Price & Stock for HUFA76429D3ST-F085

Part # Distributor Description Stock Price Buy
Rochester Electronics HUF76429D_F085 - N-Channel Logic Level UltraFET Power MOSFET 60V, 20A RoHS: Compliant Status: Obsolete Min Qty: 1 5282
  • 1 $0.9240
  • 25 $0.9055
  • 100 $0.8686
  • 500 $0.8316
  • 1,000 $0.7854
$0.7854 / $0.9240 Buy Now

Part Details for HUFA76429D3ST-F085

HUFA76429D3ST-F085 CAD Models

HUFA76429D3ST-F085 Part Data Attributes:

HUFA76429D3ST-F085 onsemi
Buy Now Datasheet
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HUFA76429D3ST-F085 onsemi N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 27mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code TO-252 3L (DPAK)
Package Description ROHS COMPLIANT PACKAGE-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Additional Feature ULTRA-LOW RESISTANCE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for HUFA76429D3ST-F085

This table gives cross-reference parts and alternative options found for HUFA76429D3ST-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUFA76429D3ST-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUFA76429D3S 20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUFA76429D3ST-F085 vs HUFA76429D3S
HUFA76429D3ST_F085 60V, 20A, 20.5mΩ, DPAK N-Channel UltraFET®, TO-252 3L (DPAK), 5000-TAPE REEL onsemi HUFA76429D3ST-F085 vs HUFA76429D3ST_F085
HUFA76429D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUFA76429D3ST-F085 vs HUFA76429D3ST
Part Number Description Manufacturer Compare
IRF9Z34NSTRL Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier HUFA76429D3ST-F085 vs IRF9Z34NSTRL
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor HUFA76429D3ST-F085 vs HUF75321D3S
BUK553-60A TRANSISTOR 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors HUFA76429D3ST-F085 vs BUK553-60A
HUFA76413D3 Power Field-Effect Transistor, 20A I(D), 60V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation HUFA76429D3ST-F085 vs HUFA76413D3
MTD1N50E1 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi HUFA76429D3ST-F085 vs MTD1N50E1
HUFA75321D3S Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUFA76429D3ST-F085 vs HUFA75321D3S
934056617118 Power Field-Effect Transistor Nexperia HUFA76429D3ST-F085 vs 934056617118
HUFA75329D3S Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUFA76429D3ST-F085 vs HUFA75329D3S
HUFA76419D3ST N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 43mΩ, 2500-REEL, Automotive Qualified onsemi HUFA76429D3ST-F085 vs HUFA76419D3ST
BUK7575-55A Power Field-Effect Transistor Nexperia HUFA76429D3ST-F085 vs BUK7575-55A

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