Datasheets
HUF76429D3ST by:

Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN

Part Details for HUF76429D3ST by Fairchild Semiconductor Corporation

Overview of HUF76429D3ST by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for HUF76429D3ST

Part # Distributor Description Stock Price Buy
Quest Components   1960
  • 1 $1.9730
  • 204 $0.7892
  • 1,015 $0.6906
$0.6906 / $1.9730 Buy Now
Rochester Electronics 20A, 60V, 0.029ohm, N-Channel Power MOSFET, TO-252AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 404
  • 1 $0.5801
  • 25 $0.5685
  • 100 $0.5453
  • 500 $0.5221
  • 1,000 $0.4931
$0.4931 / $0.5801 Buy Now

Part Details for HUF76429D3ST

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HUF76429D3ST Part Data Attributes:

HUF76429D3ST Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
HUF76429D3ST Fairchild Semiconductor Corporation Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252AA
Package Description TO-252AA, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF76429D3ST

This table gives cross-reference parts and alternative options found for HUF76429D3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76429D3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF76429D3S 20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF76429D3ST vs HUF76429D3S
HUF76429D3S 20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Rochester Electronics LLC HUF76429D3ST vs HUF76429D3S
Part Number Description Manufacturer Compare
IRF9Z34NSTRL Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier HUF76429D3ST vs IRF9Z34NSTRL
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor HUF76429D3ST vs HUF75321D3S
BUK553-60A TRANSISTOR 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors HUF76429D3ST vs BUK553-60A
HUFA76413D3 Power Field-Effect Transistor, 20A I(D), 60V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation HUF76429D3ST vs HUFA76413D3
MTD1N50E1 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi HUF76429D3ST vs MTD1N50E1
HUFA75321D3S Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF76429D3ST vs HUFA75321D3S
934056617118 Power Field-Effect Transistor Nexperia HUF76429D3ST vs 934056617118
HUFA75329D3S Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF76429D3ST vs HUFA75329D3S
HUFA76419D3ST N-Channel Logic Level UltraFET® Power MOSFET 60V, 20A, 43mΩ, 2500-REEL, Automotive Qualified onsemi HUF76429D3ST vs HUFA76419D3ST
BUK7575-55A Power Field-Effect Transistor Nexperia HUF76429D3ST vs BUK7575-55A

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