Datasheets
HUF76129S3ST by:

Power Field-Effect Transistor, 56A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Details for HUF76129S3ST by Harris Semiconductor

Overview of HUF76129S3ST by Harris Semiconductor

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Price & Stock for HUF76129S3ST

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-263AB 19
  • 1 $0.6789
  • 8 $0.5658
$0.5658 / $0.6789 Buy Now

Part Details for HUF76129S3ST

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HUF76129S3ST Part Data Attributes:

HUF76129S3ST Harris Semiconductor
Buy Now Datasheet
Compare Parts:
HUF76129S3ST Harris Semiconductor Power Field-Effect Transistor, 56A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 56 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF76129S3ST

This table gives cross-reference parts and alternative options found for HUF76129S3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76129S3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF76129S3S Power Field-Effect Transistor, 56A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Harris Semiconductor HUF76129S3ST vs HUF76129S3S
HUF76129S3S 56A, 30V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF76129S3ST vs HUF76129S3S
HUF76129S3S Power Field-Effect Transistor, 56A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation HUF76129S3ST vs HUF76129S3S
HUF76129S3ST 56A, 30V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF76129S3ST vs HUF76129S3ST
Part Number Description Manufacturer Compare
HUF76129S3ST 56A, 30V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF76129S3ST vs HUF76129S3ST
HUF76129S3S Power Field-Effect Transistor, 56A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation HUF76129S3ST vs HUF76129S3S
HUF76129S3S 56A, 30V, 0.023ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF76129S3ST vs HUF76129S3S
HUF76129S3S Power Field-Effect Transistor, 56A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Harris Semiconductor HUF76129S3ST vs HUF76129S3S

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