HUF76129S3ST vs HUF76129S3ST feature comparison

HUF76129S3ST Harris Semiconductor

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HUF76129S3ST Intersil Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR INTERSIL CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 56 A 56 A
Drain-source On Resistance-Max 0.023 Ω 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code No

Compare HUF76129S3ST with alternatives

Compare HUF76129S3ST with alternatives