Datasheets
HUF75631SK8T by:

5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

Part Details for HUF75631SK8T by Intersil Corporation

Overview of HUF75631SK8T by Intersil Corporation

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Price & Stock for HUF75631SK8T

Part # Distributor Description Stock Price Buy
Bristol Electronics   10975
RFQ
Quest Components 5.5 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 11660
  • 1 $1.3000
  • 924 $0.5980
  • 1,673 $0.5460
$0.5460 / $1.3000 Buy Now
Quest Components 5.5 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 8780
  • 1 $2.0800
  • 625 $0.8580
  • 1,167 $0.7800
$0.7800 / $2.0800 Buy Now

Part Details for HUF75631SK8T

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HUF75631SK8T Part Data Attributes:

HUF75631SK8T Intersil Corporation
Buy Now Datasheet
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HUF75631SK8T Intersil Corporation 5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.039 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75631SK8T

This table gives cross-reference parts and alternative options found for HUF75631SK8T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75631SK8T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75631SK8 5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Rochester Electronics LLC HUF75631SK8T vs HUF75631SK8
HUF75631SK8T_NL Power Field-Effect Transistor, 5.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Fairchild Semiconductor Corporation HUF75631SK8T vs HUF75631SK8T_NL
HUF75631SK8 5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation HUF75631SK8T vs HUF75631SK8
Part Number Description Manufacturer Compare
IRF7452TR Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG HUF75631SK8T vs IRF7452TR
HUF75631SK8 5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation HUF75631SK8T vs HUF75631SK8
FDS3692 Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation HUF75631SK8T vs FDS3692
IRF7452TRPBF Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 Infineon Technologies AG HUF75631SK8T vs IRF7452TRPBF
HUFA75631SK8 5.5A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation HUF75631SK8T vs HUFA75631SK8
IRF7452TRPBF Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier HUF75631SK8T vs IRF7452TRPBF
FDS3682 Power Field-Effect Transistor, 6A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation HUF75631SK8T vs FDS3682
IRF7452TR Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier HUF75631SK8T vs IRF7452TR
PHK4NQ10T TRANSISTOR 4 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors HUF75631SK8T vs PHK4NQ10T
HUFA75631SK8 Power Field-Effect Transistor, 5.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Fairchild Semiconductor Corporation HUF75631SK8T vs HUFA75631SK8

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