There are no models available for this part yet.
Overview of HUFA75631SK8 by Intersil Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 2 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for HUFA75631SK8 by Intersil Corporation
Part Data Attributes for HUFA75631SK8 by Intersil Corporation
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|---|---|
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Part Life Cycle Code
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Transferred
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Ihs Manufacturer
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INTERSIL CORP
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Package Description
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SMALL OUTLINE, R-PDSO-G8
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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5.5 A
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Drain-source On Resistance-Max
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0.039 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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MS-012AA
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JESD-30 Code
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R-PDSO-G8
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Number of Elements
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1
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Transistor Application
|
SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for HUFA75631SK8
This table gives cross-reference parts and alternative options found for HUFA75631SK8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUFA75631SK8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HUFA75631SK8T | Power Field-Effect Transistor, 5.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | Fairchild Semiconductor Corporation | HUFA75631SK8 vs HUFA75631SK8T |
| HUFA75631SK8 | Power Field-Effect Transistor, 5.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Fairchild Semiconductor Corporation | HUFA75631SK8 vs HUFA75631SK8 |