Datasheets
HP4936DY by:

Power Field-Effect Transistor, 5.8A I(D), 30V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for HP4936DY by Harris Semiconductor

Overview of HP4936DY by Harris Semiconductor

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Applications Environmental Monitoring Industrial Automation Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems

Price & Stock for HP4936DY

Part # Distributor Description Stock Price Buy
DISTI # 2156-HP4936DY-600026-ND
DigiKey POWER FIELD-EFFECT TRANSISTOR, 5 Min Qty: 650 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 1838
In Stock
  • 650 $0.4600
$0.4600 Buy Now
Rochester Electronics HP4936 - Power Field-Effect Transistor, 5.8A, 30V, 0.037ohm, 2-Element, N-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 1838
  • 1 $0.4664
  • 25 $0.4571
  • 100 $0.4384
  • 500 $0.4198
  • 1,000 $0.3964
$0.3964 / $0.4664 Buy Now

Part Details for HP4936DY

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HP4936DY Part Data Attributes:

HP4936DY Harris Semiconductor
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HP4936DY Harris Semiconductor Power Field-Effect Transistor, 5.8A I(D), 30V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.8 A
Drain-source On Resistance-Max 0.037 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HP4936DY

This table gives cross-reference parts and alternative options found for HP4936DY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HP4936DY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HP4936DYT 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC HP4936DY vs HP4936DYT
HP4936DYT 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Intersil Corporation HP4936DY vs HP4936DYT
Part Number Description Manufacturer Compare
FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL Fairchild Semiconductor Corporation HP4936DY vs FDS6812A
IRF7403 Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG HP4936DY vs IRF7403
NDS9936 Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation HP4936DY vs NDS9936
PHP125-TAPE-7 TRANSISTOR 2.3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors HP4936DY vs PHP125-TAPE-7
FW103 Power Field-Effect Transistor, 3A I(D), 30V, 0.205ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd HP4936DY vs FW103
FW202 Power Field-Effect Transistor, 5A I(D), 20V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd HP4936DY vs FW202
DMP2066LSS-13 Power Field-Effect Transistor, 6.5A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Diodes Incorporated HP4936DY vs DMP2066LSS-13
BSO203SPH Power Field-Effect Transistor, 5.7A I(D), 20V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG HP4936DY vs BSO203SPH
NDS9956AX 3.7A, 30V, 0.08ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Texas Instruments HP4936DY vs NDS9956AX
HUF76105DK8 Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 Fairchild Semiconductor Corporation HP4936DY vs HUF76105DK8

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