Datasheets
FW202 by:

Power Field-Effect Transistor, 5A I(D), 20V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for FW202 by SANYO Electric Co Ltd

Overview of FW202 by SANYO Electric Co Ltd

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Applications Consumer Electronics Telecommunications

Part Details for FW202

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FW202 Part Data Attributes:

FW202 SANYO Electric Co Ltd
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FW202 SANYO Electric Co Ltd Power Field-Effect Transistor, 5A I(D), 20V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Part Life Cycle Code Obsolete
Ihs Manufacturer SANYO ELECTRIC CO LTD
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FW202

This table gives cross-reference parts and alternative options found for FW202. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FW202, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMDF2P01HDR2 3.4A, 12V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 onsemi FW202 vs MMDF2P01HDR2
HP4936DY 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Intersil Corporation FW202 vs HP4936DY
RF1K49090 Power Field-Effect Transistor, 3.5A I(D), 12V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Fairchild Semiconductor Corporation FW202 vs RF1K49090
HAT1126R 6A, 60V, 0.085ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation FW202 vs HAT1126R
HP4936DYT 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Intersil Corporation FW202 vs HP4936DYT
BSO207P Power Field-Effect Transistor, 5.7A I(D), 20V, 0.045ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOP-8 Infineon Technologies AG FW202 vs BSO207P
BSO301SPH Power Field-Effect Transistor, 12.6A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG FW202 vs BSO301SPH
HUF76105DK8T Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 Fairchild Semiconductor Corporation FW202 vs HUF76105DK8T
NDS8961 Power Field-Effect Transistor, 3.1A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FW202 vs NDS8961
BSO211PHXUMA1 Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG FW202 vs BSO211PHXUMA1

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