Datasheets
HGTP7N60A4D by:

34A, 600V, N-CHANNEL IGBT, TO-220AB

Part Details for HGTP7N60A4D by Intersil Corporation

Overview of HGTP7N60A4D by Intersil Corporation

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Part Details for HGTP7N60A4D

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HGTP7N60A4D Part Data Attributes:

HGTP7N60A4D Intersil Corporation
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HGTP7N60A4D Intersil Corporation 34A, 600V, N-CHANNEL IGBT, TO-220AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 34 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 85 ns
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 205 ns
Turn-on Time-Nom (ton) 17 ns

Alternate Parts for HGTP7N60A4D

This table gives cross-reference parts and alternative options found for HGTP7N60A4D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP7N60A4D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTP7N60A4D Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation HGTP7N60A4D vs HGTP7N60A4D
Part Number Description Manufacturer Compare
FGH50N6S2D Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, Fairchild Semiconductor Corporation HGTP7N60A4D vs FGH50N6S2D
IRG4PH20KDPBF Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGTP7N60A4D vs IRG4PH20KDPBF
HGT1S20N60C3RS 40A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGTP7N60A4D vs HGT1S20N60C3RS
MGY25N120D 38A, 1200V, N-CHANNEL IGBT, TO-264AA, TO-264, 3 PIN Motorola Mobility LLC HGTP7N60A4D vs MGY25N120D
MGW12N120D 20A, 1200V, N-CHANNEL IGBT, TO-247AE Motorola Mobility LLC HGTP7N60A4D vs MGW12N120D
HGTG12N60C3DR 24A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTP7N60A4D vs HGTG12N60C3DR
HGTP2N120CN 2A, 1200V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGTP7N60A4D vs HGTP2N120CN
IRG4BC20FDPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier HGTP7N60A4D vs IRG4BC20FDPBF
IRG4BC20W-SPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HGTP7N60A4D vs IRG4BC20W-SPBF
SGP15N60 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB Siemens HGTP7N60A4D vs SGP15N60

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