Part Details for HGTP7N60A4D by Fairchild Semiconductor Corporation
Overview of HGTP7N60A4D by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HGTP7N60A4D
HGTP7N60A4D CAD Models
HGTP7N60A4D Part Data Attributes:
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HGTP7N60A4D
Fairchild Semiconductor Corporation
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HGTP7N60A4D
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220AB, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 34 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 85 ns | |
Gate-Emitter Thr Voltage-Max | 7 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 205 ns | |
Turn-on Time-Nom (ton) | 17 ns |
Alternate Parts for HGTP7N60A4D
This table gives cross-reference parts and alternative options found for HGTP7N60A4D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP7N60A4D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | HGTP7N60A4D vs GT15H101 |
IRGBC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | HGTP7N60A4D vs IRGBC30FD2 |
IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | HGTP7N60A4D vs IRGPC50U |
HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | HGTP7N60A4D vs HGTD7N60C3S9A |
IRG4BC20W-STRLPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | HGTP7N60A4D vs IRG4BC20W-STRLPBF |
IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | HGTP7N60A4D vs IXGH36N60A3D4 |
IRG4PH50UD | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | HGTP7N60A4D vs IRG4PH50UD |
HGTG10N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | HGTP7N60A4D vs HGTG10N120BND |
HGTP12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | HGTP7N60A4D vs HGTP12N60C3DR |
IXGH12N60BD1 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGTP7N60A4D vs IXGH12N60BD1 |