Part Details for HGTG12N60B3 by Fairchild Semiconductor Corporation
Overview of HGTG12N60B3 by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HGTG12N60B3
HGTG12N60B3 CAD Models
HGTG12N60B3 Part Data Attributes
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HGTG12N60B3
Fairchild Semiconductor Corporation
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Datasheet
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HGTG12N60B3
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-247 | |
Package Description | TO-247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 27 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 175 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 392 ns | |
Turn-on Time-Nom (ton) | 45 ns |
Alternate Parts for HGTG12N60B3
This table gives cross-reference parts and alternative options found for HGTG12N60B3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG12N60B3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | HGTG12N60B3 vs GT15H101 |
IRGBC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | HGTG12N60B3 vs IRGBC30FD2 |
SGH20N60RUFD | Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Samsung Semiconductor | HGTG12N60B3 vs SGH20N60RUFD |
IRGPC50S | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | International Rectifier | HGTG12N60B3 vs IRGPC50S |
IXGH28N60BD1 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGTG12N60B3 vs IXGH28N60BD1 |
IRGPC40F | Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | International Rectifier | HGTG12N60B3 vs IRGPC40F |
IXSH20N60AU1 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD | IXYS Corporation | HGTG12N60B3 vs IXSH20N60AU1 |
HGTG30N60C3D_NL | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | HGTG12N60B3 vs HGTG30N60C3D_NL |
IXGH28N60B | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGTG12N60B3 vs IXGH28N60B |
IXSH24N60BD1 | Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | HGTG12N60B3 vs IXSH24N60BD1 |