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HGTG12N60B3 by:

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

Part Details for HGTG12N60B3 by Fairchild Semiconductor Corporation

Overview of HGTG12N60B3 by Fairchild Semiconductor Corporation

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Part Details for HGTG12N60B3

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HGTG12N60B3 Part Data Attributes

HGTG12N60B3 Fairchild Semiconductor Corporation
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HGTG12N60B3 Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 27 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 175 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 392 ns
Turn-on Time-Nom (ton) 45 ns

Alternate Parts for HGTG12N60B3

This table gives cross-reference parts and alternative options found for HGTG12N60B3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG12N60B3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
GT15H101 TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components HGTG12N60B3 vs GT15H101
IRGBC30FD2 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG12N60B3 vs IRGBC30FD2
SGH20N60RUFD Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Samsung Semiconductor HGTG12N60B3 vs SGH20N60RUFD
IRGPC50S Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier HGTG12N60B3 vs IRGPC50S
IXGH28N60BD1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG12N60B3 vs IXGH28N60BD1
IRGPC40F Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG12N60B3 vs IRGPC40F
IXSH20N60AU1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD IXYS Corporation HGTG12N60B3 vs IXSH20N60AU1
HGTG30N60C3D_NL Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation HGTG12N60B3 vs HGTG30N60C3D_NL
IXGH28N60B Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG12N60B3 vs IXGH28N60B
IXSH24N60BD1 Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN IXYS Corporation HGTG12N60B3 vs IXSH24N60BD1

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