Part Details for HGTG12N60A4D by Fairchild Semiconductor Corporation
Overview of HGTG12N60A4D by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HGTG12N60A4D
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | 600V, SMPS N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Not Compliant | Europe - 18 |
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RFQ | |
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Chip1Cloud | IGBT 600V 54A 167W TO247 | 3100 |
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RFQ | |
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Win Source Electronics | IGBT 600V 54A 167W TO247 | 31927 |
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$2.5440 / $3.8160 | Buy Now |
Part Details for HGTG12N60A4D
HGTG12N60A4D CAD Models
HGTG12N60A4D Part Data Attributes:
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HGTG12N60A4D
Fairchild Semiconductor Corporation
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Datasheet
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HGTG12N60A4D
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-247 | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 54 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 95 ns | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 180 ns | |
| Turn-on Time-Nom (ton) | 33 ns |
Alternate Parts for HGTG12N60A4D
This table gives cross-reference parts and alternative options found for HGTG12N60A4D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG12N60A4D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTG12N60A4D_NL | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | HGTG12N60A4D vs HGTG12N60A4D_NL |
| HGTG12N60A4D | 54A, 600V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | HGTG12N60A4D vs HGTG12N60A4D |
| HGTG12N60A4D | 600V, SMPS IGBT, 450-TUBE | onsemi | HGTG12N60A4D vs HGTG12N60A4D |