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HGT1S12N60A4S9A by:

600V SMPS Series N-Channel IGBT, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL

Part Details for HGT1S12N60A4S9A by Fairchild Semiconductor Corporation

Overview of HGT1S12N60A4S9A by Fairchild Semiconductor Corporation

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Price & Stock for HGT1S12N60A4S9A

Part # Distributor Description Stock Price Buy
ComSIT USA 600V, SMPS SERIES N-CHANNEL IGBT Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant Europe - 750
RFQ

Part Details for HGT1S12N60A4S9A

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HGT1S12N60A4S9A Part Data Attributes:

HGT1S12N60A4S9A Fairchild Semiconductor Corporation
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HGT1S12N60A4S9A Fairchild Semiconductor Corporation 600V SMPS Series N-Channel IGBT, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description TO-263AB, 3 PIN
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 54 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 95 ns
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 180 ns
Turn-on Time-Nom (ton) 33 ns

Alternate Parts for HGT1S12N60A4S9A

This table gives cross-reference parts and alternative options found for HGT1S12N60A4S9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60A4S9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGT1S12N60A4S9A 54A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S12N60A4S9A vs HGT1S12N60A4S9A
Part Number Description Manufacturer Compare
FGB30N6S2T Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 Fairchild Semiconductor Corporation HGT1S12N60A4S9A vs FGB30N6S2T
FGB30N6S2 Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 Fairchild Semiconductor Corporation HGT1S12N60A4S9A vs FGB30N6S2
HGT1S12N60A4S9A 54A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S12N60A4S9A vs HGT1S12N60A4S9A

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