Part Details for HGT1S12N60A4S9A by Fairchild Semiconductor Corporation
Overview of HGT1S12N60A4S9A by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for HGT1S12N60A4S9A
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | 600V, SMPS SERIES N-CHANNEL IGBT Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | Europe - 750 |
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RFQ |
Part Details for HGT1S12N60A4S9A
HGT1S12N60A4S9A CAD Models
HGT1S12N60A4S9A Part Data Attributes:
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HGT1S12N60A4S9A
Fairchild Semiconductor Corporation
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Datasheet
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HGT1S12N60A4S9A
Fairchild Semiconductor Corporation
600V SMPS Series N-Channel IGBT, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | D2PAK | |
Package Description | TO-263AB, 3 PIN | |
Pin Count | 2 | |
Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOW CONDUCTION LOSS | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 54 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 95 ns | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 167 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 180 ns | |
Turn-on Time-Nom (ton) | 33 ns |
Alternate Parts for HGT1S12N60A4S9A
This table gives cross-reference parts and alternative options found for HGT1S12N60A4S9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60A4S9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HGT1S12N60A4S9A | 54A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGT1S12N60A4S9A vs HGT1S12N60A4S9A |