Part Details for HAF2012L by Renesas Electronics Corporation
Overview of HAF2012L by Renesas Electronics Corporation
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Part Details for HAF2012L
HAF2012L CAD Models
HAF2012L Part Data Attributes:
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HAF2012L
Renesas Electronics Corporation
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HAF2012L
Renesas Electronics Corporation
Silicon N Channel MOS FET Series Power Switching, LDPAK(L), /Bag
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | LDPAK(L) | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Renesas Electronics | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |