Datasheets
HAF2002 by:
Hitachi Ltd
Hitachi Ltd
Renesas Electronics Corporation
Not Found

Power Field-Effect Transistor, 0.065ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN

Part Details for HAF2002 by Hitachi Ltd

Results Overview of HAF2002 by Hitachi Ltd

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HAF2002 Information

HAF2002 by Hitachi Ltd is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
HAF2002 Renesas Electronics Corporation Silicon N Channel MOS FET Series Power Switching, TO220FM, /Bag

Part Details for HAF2002

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HAF2002 Part Data Attributes

HAF2002 Hitachi Ltd
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HAF2002 Hitachi Ltd Power Field-Effect Transistor, 0.065ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN
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Part Life Cycle Code Transferred
Ihs Manufacturer HITACHI LTD
Part Package Code TO-220FM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Configuration SINGLE
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE