Part Details for HAF1009(L) by Renesas Electronics Corporation
Overview of HAF1009(L) by Renesas Electronics Corporation
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Part Details for HAF1009(L)
HAF1009(L) CAD Models
HAF1009(L) Part Data Attributes
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HAF1009(L)
Renesas Electronics Corporation
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Datasheet
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HAF1009(L)
Renesas Electronics Corporation
40A, 60V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-4
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| Additional Feature | BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (Abs) (ID) | 40 A | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |