Part Details for HAF1009(L) by Hitachi Ltd
Overview of HAF1009(L) by Hitachi Ltd
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Part Details for HAF1009(L)
HAF1009(L) CAD Models
HAF1009(L) Part Data Attributes:
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HAF1009(L)
Hitachi Ltd
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HAF1009(L)
Hitachi Ltd
Power Field-Effect Transistor, 40A I(D), 60V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-4
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HITACHI LTD | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.05 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |