Part Details for H5TQ2G43AMP-G8C by SK Hynix Inc
Overview of H5TQ2G43AMP-G8C by SK Hynix Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Part Details for H5TQ2G43AMP-G8C
H5TQ2G43AMP-G8C CAD Models
H5TQ2G43AMP-G8C Part Data Attributes
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H5TQ2G43AMP-G8C
SK Hynix Inc
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Datasheet
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H5TQ2G43AMP-G8C
SK Hynix Inc
DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA78, FBGA-78
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Part Package Code | BGA | |
| Package Description | LFBGA, BGA78,9X13,32 | |
| Pin Count | 78 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.3 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 533 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B78 | |
| JESD-609 Code | e1 | |
| Length | 11.6 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 78 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LFBGA | |
| Package Equivalence Code | BGA78,9X13,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.35 mm | |
| Self Refresh | YES | |
| Standby Current-Max | 0.02 A | |
| Supply Current-Max | 0.32 mA | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 8.4 mm |
Alternate Parts for H5TQ2G43AMP-G8C
This table gives cross-reference parts and alternative options found for H5TQ2G43AMP-G8C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H5TQ2G43AMP-G8C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IDSH1G-02A1F1C-10F | DDR DRAM, 256MX4, 20ns, CMOS, PBGA78, GREEN, PLASTIC, TFBGA-78 | Qimonda AG | H5TQ2G43AMP-G8C vs IDSH1G-02A1F1C-10F |
| MT41J512M4THR-15:D | DDR DRAM, 256MX4, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | H5TQ2G43AMP-G8C vs MT41J512M4THR-15:D |
| MT41K256M4JP-15E:F | DDR DRAM, 256MX4, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | H5TQ2G43AMP-G8C vs MT41K256M4JP-15E:F |
| K4B1G0446G-BCF80 | DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Samsung Semiconductor | H5TQ2G43AMP-G8C vs K4B1G0446G-BCF80 |
| MT41J256M4JP-15IT:F | DDR DRAM, 256MX4, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | H5TQ2G43AMP-G8C vs MT41J256M4JP-15IT:F |
| MT41J256M4HX-125FIT:D | DDR DRAM, 256MX4, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | H5TQ2G43AMP-G8C vs MT41J256M4HX-125FIT:D |
| K4B2G0446C-HCF80 | DDR DRAM, 512MX4, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Samsung Semiconductor | H5TQ2G43AMP-G8C vs K4B2G0446C-HCF80 |
| K4B2G0446B-HCK00 | DDR DRAM, 512MX4, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | Samsung Semiconductor | H5TQ2G43AMP-G8C vs K4B2G0446B-HCK00 |
| MT41J512M14DA-107:H | DDR DRAM, 512MX4, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | H5TQ2G43AMP-G8C vs MT41J512M14DA-107:H |
| MT41K512M4DA-125IT:K | DDR DRAM, 512MX4, CMOS, PBGA78, FBGA-78 | Micron Technology Inc | H5TQ2G43AMP-G8C vs MT41K512M4DA-125IT:K |