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Transistors / IGBTs / GT60M303(Q)
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GT60M303(Q) by: Toshiba America Electronic Components

IGBT 900V DUAL 60A TO-3P LH

Part Details for GT60M303(Q) by Toshiba America Electronic Components

Overview of GT60M303(Q) by Toshiba America Electronic Components

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Applications Automotive

Part Details for GT60M303(Q)

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GT60M303(Q) Part Data Attributes:

Parametric Data
GT60M303(Q) Toshiba America Electronic Components
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GT60M303(Q) Toshiba America Electronic Components IGBT 900V DUAL 60A TO-3P LH
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Case Connection COLLECTOR
Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 900 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 400 ns
Gate-Emitter Voltage-Max 25 V
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Rise Time-Max (tr) 600 ns
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 460 ns

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