Part Details for GT60M302 by Toshiba America Electronic Components
Overview of GT60M302 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for GT60M302
GT60M302 CAD Models
GT60M302 Part Data Attributes
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GT60M302
Toshiba America Electronic Components
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Datasheet
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GT60M302
Toshiba America Electronic Components
TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, 2-21F2C, 3 PIN, Insulated Gate BIP Transistor
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH SPEED | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 60 A | |
Collector-Emitter Voltage-Max | 900 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 370 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 25 V | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 200 W | |
Power Dissipation-Max (Abs) | 200 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 600 ns | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 500 ns | |
Turn-on Time-Nom (ton) | 350 ns | |
VCEsat-Max | 3.3 V |
Alternate Parts for GT60M302
This table gives cross-reference parts and alternative options found for GT60M302. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GT60M302, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SGL60N90DG3 | Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN | Samsung Semiconductor | GT60M302 vs SGL60N90DG3 |
CT60AM-18B | Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel | Mitsubishi Electric | GT60M302 vs CT60AM-18B |
GT60M104 | TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, 2-21F2C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | GT60M302 vs GT60M104 |