Part Details for SGL60N90DG3 by Samsung Semiconductor
Overview of SGL60N90DG3 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SGL60N90DG3
SGL60N90DG3 CAD Models
SGL60N90DG3 Part Data Attributes
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SGL60N90DG3
Samsung Semiconductor
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Datasheet
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SGL60N90DG3
Samsung Semiconductor
Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel, TO-264, TO-264, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TO-264 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH SPEED SWITCHING | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 60 A | |
Collector-Emitter Voltage-Max | 900 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JEDEC-95 Code | TO-264 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 450 ns | |
Turn-on Time-Nom (ton) | 320 ns |
Alternate Parts for SGL60N90DG3
This table gives cross-reference parts and alternative options found for SGL60N90DG3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGL60N90DG3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CT60AM-18B | Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel | Mitsubishi Electric | SGL60N90DG3 vs CT60AM-18B |
GT60M104 | TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, 2-21F2C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | SGL60N90DG3 vs GT60M104 |