Part Details for GT20J311 by Toshiba America Electronic Components
Overview of GT20J311 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for GT20J311
GT20J311 CAD Models
GT20J311 Part Data Attributes:
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GT20J311
Toshiba America Electronic Components
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Datasheet
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GT20J311
Toshiba America Electronic Components
TRANSISTOR 20 A, 600 V, N-CHANNEL IGBT, 2-16H1A, 3 PIN, Insulated Gate BIP Transistor
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH SPEED | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 20 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 300 ns | |
Gate-Emitter Thr Voltage-Max | 8 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 120 W | |
Power Dissipation-Max (Abs) | 120 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 500 ns | |
Turn-on Time-Nom (ton) | 400 ns | |
VCEsat-Max | 2.7 V |
Alternate Parts for GT20J311
This table gives cross-reference parts and alternative options found for GT20J311. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GT20J311, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | GT20J311 vs GT15H101 |
IRGBC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | GT20J311 vs IRGBC30FD2 |
IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | GT20J311 vs IRGPC50U |
HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | GT20J311 vs HGTD7N60C3S9A |
IRG4BC20W-STRLPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | GT20J311 vs IRG4BC20W-STRLPBF |
IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | GT20J311 vs IXGH36N60A3D4 |
IRG4PH50UD | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | GT20J311 vs IRG4PH50UD |
HGTG10N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | GT20J311 vs HGTG10N120BND |
HGTP12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | GT20J311 vs HGTP12N60C3DR |
IXGH12N60BD1 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | GT20J311 vs IXGH12N60BD1 |