Part Details for FY8ABJ-03 by Mitsubishi Electric
Overview of FY8ABJ-03 by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FY8ABJ-03
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, P-Channel, SO | 3465 |
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$0.2250 / $0.5400 | Buy Now |
Part Details for FY8ABJ-03
FY8ABJ-03 CAD Models
FY8ABJ-03 Part Data Attributes
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FY8ABJ-03
Mitsubishi Electric
Buy Now
Datasheet
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Compare Parts:
FY8ABJ-03
Mitsubishi Electric
Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FY8ABJ-03
This table gives cross-reference parts and alternative options found for FY8ABJ-03. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FY8ABJ-03, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS6892AZ | 7.5A, 20V, 0.018ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | FY8ABJ-03 vs FDS6892AZ |
| RF1K49090 | 3.5A, 12V, 0.05ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | Rochester Electronics LLC | FY8ABJ-03 vs RF1K49090 |
| NTMD4N03R2 | 4A, 30V, 0.06ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOIC-8 | Rochester Electronics LLC | FY8ABJ-03 vs NTMD4N03R2 |
| HAT1016R | Power Field-Effect Transistor, 4.5A I(D), 30V, 0.18ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Hitachi Ltd | FY8ABJ-03 vs HAT1016R |
| NDS9947 | 3.5A, 20V, 0.1ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET | Texas Instruments | FY8ABJ-03 vs NDS9947 |
| FW231A | Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SANYO Electric Co Ltd | FY8ABJ-03 vs FW231A |
| BSO211P | 4.7A, 20V, 0.067ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | FY8ABJ-03 vs BSO211P |
| NDS9936 | 5A, 30V, 0.05ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 | Rochester Electronics LLC | FY8ABJ-03 vs NDS9936 |
| HAT1020R | Power Field-Effect Transistor, 5A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 | Hitachi Ltd | FY8ABJ-03 vs HAT1020R |
| HAT1038R | Power Field-Effect Transistor, 3.5A I(D), 60V, 0.23ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 | Hitachi Ltd | FY8ABJ-03 vs HAT1038R |