FY8ABJ-03
vs
RF1K49090
feature comparison
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
MITSUBISHI ELECTRIC CORP
|
ROCHESTER ELECTRONICS LLC
|
Package Description |
SMALL OUTLINE, R-PDSO-G8
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
12 V
|
Drain Current-Max (ID) |
8 A
|
3.5 A
|
Drain-source On Resistance-Max |
0.02 Ω
|
0.05 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
Number of Elements |
1
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
56 A
|
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
No
|
JEDEC-95 Code |
|
MS-012AA
|
JESD-609 Code |
|
e0
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Terminal Finish |
|
TIN LEAD
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare FY8ABJ-03 with alternatives
Compare RF1K49090 with alternatives